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| Semiconductor STD123ASF NPN Silicon Transistor Features * High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA * Suitable for large current drive directly. * Application for IRED Drive transistor in remote transmitter. Ordering Information Type NO. STD123ASF Marking 12A Package Code SOT-23F Outline Dimensions 2.40.1 1.60.1 unit : mm 1 2.90.1 1.90 BSC 3 0.40.05 2 0.150.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2029-001 0.90.1 0~0.1 1 STD123ASF Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10x8x0.1mm (Ta=25C) Symbol VCBO VCEO VEBO IC PC* Tj Tstg Ratings 10 6 3 1 350 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON Test Condition IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=10V, IE=0 VEB=3V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, VIN=0.3V Min. Typ. Max. 10 6 3 400 0.1 260 5 0.6 0.1 0.1 0.3 - Unit V V V A A V MHz pF KST-2029-001 2 STD123ASF Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 VCE(sat)-IC Fig. 3 COb-VCB Fig. 4 hFE-IC Fig. 5 RON-IB KST-2029-001 3 |
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